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Congratulations to our colleague, good luck in your future scientific journey!

 

“My thesis is devoted to the study of optical properties of AlGaN/GaN heterostructures in the THz range. This material is used from high electron mobility transistors to THz emitters detectors, phase shifters, etc. However, creating terahertz sources remains a challenge. Excitation of 2D plasmons in AlGaN/GaN heterostructures are promising candidates for electrically tunable THz source,” says Daniil.

 

Daniil explains the importance of his work: “The THz range lies between GHz electronics and far-infrared optics. THz radiation is non-ionizing and has unique properties like penetration into many non-metallic materials, such as plastics, clothing, and paper, making it useful for various security and biological applications. Moreover, THz frequencies will be used in future high-speed wireless communication systems and standards. Thus, the development of a THz source is in demand by science and industry.”

 

According to Daniil, 2D electron gas with thickness around several nanometers on half-millimetre dielectric substrate have a significant response in THz range (wavelength around 100 um), the properties of such a conductive layer can be obtained by analysing remote THz measurements.

 

“The most important is the observation of 2D plasmon in AlGaN/GaN heterostructures at room temperature due to the analysis of complex (amplitude and phase) transmission/reflection spectra of THz. This is important for the application of plasmonic devices at room temperature,” says Daniil.